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60NF06 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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60NF06 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 60NF06 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 30A 0.016 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS=0 VDS= 60V; VGS=0; Tj= 125℃ 1 10 μA VSD Forward On-Voltage IS= 60A; VGS=0 1.3 V · isc Website:www.iscsemi.cn |
유사한 부품 번호 - 60NF06 |
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유사한 설명 - 60NF06 |
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