BCV28 datasheet(1/1 Pages) ZETEX

부품명	BCV28

상세설명	PNP SILICON DARLINGTON TRANSISTOR

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SOT89 PNP SILICON

DARLINGTON TRANSISTOR

ISSUE 3 – SEPTEMBER 1995

7

COMPLEMENTARY TYPE –

BCV29

PARTMARKING DETAIL –

ED

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-10

V

Peak Pulse Current

ICM

-800

mA

Continuous Collector Current

IC

-500

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature

Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-40

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-30

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-10

V

IE=10µA

Collector Cut-Off

Current

ICBO

-100

-10

nA

µA

VCB=-30V

VCB=-30V, Tamb=150°C

Emitter Cut-Off Current IEBO

-100

nA

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-1

V

IC=-100mA, IB=-0.1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.5

V

IC=-100mA, IB=-0.1mA*

Static Forward Current

Transfer Ratio

hFE

4000

10000

20000

4000

IC=-100µA, VCE=-1V†

IC=-10mA, VCE=-5V*

IC=-100mA, VCE=-5V*

IC=-0.5mA, VCE=-5V*

Transition Frequency

fT

200

MHz

IC=-50mA, VCE=-5V

f = 20MHz

Output Capacitance

Cobo

4.5

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

† Periodic Sample Test Only.

BCV28

C

B

E

SOT89

3 - 23

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