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2PC4617M 데이터시트(PDF) 3 Page - NXP Semiconductors |
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2PC4617M 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 6 page ![]() 2003 Jul 15 3 NXP Semiconductors Product data sheet NPN general purpose transistors 2PC4617M series THERMAL CHARACTERISTICS Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air note 1 500 K/W note 2 290 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = 30 V; IE = 0 − 100 nA VCB = 30 V; IE = 0; Tj = 150 °C − 5 μA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 − 100 nA hFE DC current gain VCE = 6 V; IC = 1 mA 2PC4617QM 120 270 2PC4617RM 180 390 2PC4617SM 270 560 VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 − 200 mV Cc collector capacitance IE = ie = 0; VCB = 12 V; f = 1 MHz − 1.5 pF fT transition frequency VCE = 12 V; IC = 2 mA; f = 100 MHz 100 − MHz |
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