PIC16F720-ESLASHML datasheet(193/244 Pages) MICROCHIP

193 / 244 page

 2010 Microchip Technology Inc.

DS41430A-page 193

PIC16F/LF720/721

Voltage on MCLR/VPP during

Erase/Program

8.0

—

9.0

Temperature during programming:

10°C

 TA  40°C

D132

VPEW

VDD for Write or Row Erase

—

5.5

3.6

PIC16F720/21

PIC16LF720/21

IPPPGM*

Current on MCLR/VPP during

Erase/Write

——

5.0

Temperature during programming:

10°C

 TA  40°C

IDDPGM* Current on VDD during Erase/

Write

—

5.0

Temperature during programming:

10°C

 TA  40°C

D133

TPEW

Erase/Write cycle time

—

2.8

Temperature during programming:

10°C

 TA  40°C

D134*

TRETD

Characteristic Retention

—

Year

Provided no other specifications

are violated

23.4

DC Characteristics: PIC16F/LF720/721-I/E (Continued)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C

 TA  +85°C for industrial

-40°C

 TA  +125°C for extended

Param

No.

Sym.

Characteristic

Min.

Typ†

Max.

Units

Conditions

Legend:

TBD = To Be Determined

These parameters are characterized but not tested.

†

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note 1: Negative current is defined as current sourced by the pin.

2: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent

normal operating conditions. Higher leakage current may be measured at different input voltages.

3: Including OSC2 in CLKOUT mode.

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