STM8L151C4U6 datasheet(108/122 Pages) STMICROELECTRONICS

108 / 122 page

Electrical parameters

STM8L151xx, STM8L152xx

108/122

Doc ID 15962 Rev 5

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models

can be simulated: human body model and charge device model. This test conforms to the

JESD22-A114A/A115A standard.

Static latch-up

●

LU: 3 complementary static tests are required on 10 parts to assess the latch-up

performance. A supply overvoltage (applied to each power supply pin) and a current

injection (applied to each input, output and configurable I/O pin) are performed on each

sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,

refer to the application note AN1181.

Table 56.

EMI data (1)

Not tested in production.

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

Unit

16 MHz

SEMI

Peak level

VDD = 3.6 V,

TA = +25 °C,

LQFP32

conforming to

IEC61967-2

0.1 MHz to 30 MHz

-3

μV

30 MHz to 130 MHz

-9

130 MHz to 1 GHz

SAE EMI Level

Table 57.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Maximum

value (1)

Data based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = +25 °C

2000

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

500

Table 58.

Electrical sensitivities

Symbol

Parameter

Class

Static latch-up class

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