SILICON SWITCHING

NPN TRANSISTOR

2N2222AC3A 2N2222AC3B 2N2222AC3C

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9192

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Sustaining Voltage

IC = 10mA

IB = 0

50

V

ICES

Collector-Emitter

Cut-Off Current

VCE = 50V

50

nA

IE = 0

VCB = 75V

10

µA

IE = 0

VCB = 60V

10

nA

ICBO

Collector-Base

Cut-Off Current

TA = 150°C

10

µA

IC = 0

VEB = 4V

10

nA

IEBO

Emitter Cut-Off Current

VEB = 6V

10

µA

ON CHARACTERISTICS

IC = 150mA

IB = 15mA

0.3

VCE(Sat)

(1)

Collector-Emitter

Saturation Voltage

IC = 500mA

IB = 50mA

1.0

V

IC = 150mA

IB = 15mA

0.6

1.2

VBE(Sat)

(1)

Base-Emitter

Saturation Voltage

IC = 500mA

IB = 50mA

2.0

V

IC = 0.1mA

VCE = 10V

50

IC = 1.0mA

VCE = 10V

75

325

IC = 10mA

VCE = 10V

100

TA = -55°C

35

IC = 150mA

VCE = 10V

(1)

100

300

hFE

DC Current Gain

IC = 500mA

VCE = 10V

(1)

30

-

SMALL SIGNAL CHARACTERISTICS

Cobo

Output Capacitance

VCB = 10V

IE = 0

f = 1.0MHz

8

Cibo

Input Capacitance

VEB = 0.5V

IC = 0

f = 1.0MHz

25

pF

|

hfe|

Magnitude of small-

signal, short-circuit

forward current transfer

ratio

IC = 20mA

VCE = 20V

f = 100MHz

2.5

-

hfe

Small Signal Current

Gain

IC = 1.0mA

VCE = 10V

f = 1.0kHz

50

-

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%