SILICON EPIBASE NPN

DARLINGTON TRANSISTOR

BDS20

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8215

Issue 1

Page 2 of 2

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VCB = 80V

IE = 0

0.2

VCB = 60V

IE = 0

ICBO

Collector-Cut-Off Current

TC = 150°C

1.0

ICEO

Collector-Cut-Off Current

VCE = 40V

IB = 0

0.5

IEBO

Emitter-Cut-Off Current

VEB = 5V

IC = 0

2

mA

IC = 0.5A

VCE = 3V

1000

hFE

(1)

Forward-current transfer

ratio

IC = 3A

VCE = 3V

1000

IC = 3A

IB = 12mA

2

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 20mA

4

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 5A

IB = 20mA

2.8

VBE(on)

(1)

Base-Emitter On Voltage

IC = 3A

VCE = 3V

3.5

V

DYNAMIC CHARACTERISTICS

IC = 0.5A

VCE = 4V

fT

Transition Frequency

f = 2MHz

8

MHz

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

MECHANICAL DATA

Dimensions in mm (inches)

2.54 (0.1)

BSC

3.70 Dia. Nom

1 2 3

0.8

(0.03)

2.70

(0.106)

1.0

(0.039)

4.6 (0.18)

10.6 (0.42)

TO220M(TO-257AB)

Pin 1 – Base

Pin 2 – Collector

Pin 3 - Emitter