SILICON EPIBASE PNP

DARLINGTON TRANSISTOR

BDS21SMD

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8218

Issue 1

Page 2 of 2

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VCB = -80V

IE = 0

-0.2

VCB = -60V

IE = 0

ICBO

Collector-Cut-Off Current

TC = 150°C

-1.0

ICEO

Collector-Cut-Off Current

VCE = -40V

IB = 0

-0.5

IEBO

Emitter-Cut-Off Current

VEB = -5V

IC = 0

-2

mA

IC = -0.5A

VCE = -3V

1000

hFE

(1)

Forward-current transfer

ratio

IC = -3A

VCE = -3V

1000

IC = -3A

IB = -12mA

-2

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -5A

IB = -20mA

-4

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = -5A

IB = -20mA

-2.8

VBE(on)

(1)

Base-Emitter On Voltage

IC = -3A

VCE = -3V

-3.5

V

DYNAMIC CHARACTERISTICS

IC = -0.5A

VCE = -4V

fT

Transition Frequency

f = 2MHz

8

MHz

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

MECHANICAL DATA

Dimensions in mm (inches)

3.60 (0.142)

Max.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

0.89

(0.035)

min.

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

1

3

2

SMD1 (TO-276AB)

Underside View

Pad 1 – Base

Pad 2 – Collector

Pad 3 - Emitter