MJE13003D datasheet(2/4 Pages) UTC

부품명	MJE13003D

상세설명	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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MJE13003D

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-025.d

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Emitter Voltage (VBE =0)

VCES

700

V

Collector-Emitter Voltage (IB =0)

VCEO

400

V

Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)

VEBO

9

V

Collector Current

IC

1.5

A

Collector Peak Current (tP<5ms)

ICM

3

A

Base Current

IB

0.75

A

Base Peak Current (tP<5ms)

IBM

1.5

A

Power Dissipation (TC=25°C)

TO-126

PD

40

W

TO-92

30

TO-220

70

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Emitter-Base Breakdown Voltage

BVEBO

IE =10mA, IC=0

9

18

V

Collector-Emitter Sustaining Voltage (Note)

VCEO(SUS)

IC=10mA, IB=0

400

V

Collector Cut-Off Current

ICES

VCE =700V,VBE =0

1

mA

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)

IC=0.5 A, IB=0.1 A

0.5

V

IC=1 A, IB=0.25 A

1

V

IC=1.5 A, IB=0.5 A

3

V

Base-Emitter Saturation Voltage (Note)

VBE(SAT)

IC=0.5 A, IB=0.1 A

1

V

IC=1 A, IB=0.25 A

1.2

V

DC Current Gain

hFE

IC=0.5A, VCE =5 V

8

51

IC=1 A, VCE =5 V

5

30

Resistive Load

Rise Time

tR

VCC=125 V, IC=1 A,

IB1=0.2 A, IB2=-0.2 A

tP=25μs

1

μs

Storage Time

tS

4

μs

Fall Time

tF

0.7

μs

Inductive Load Storage Time

tS

IC=1 A, IB1=0.2 A,VBE =-5 V,

L=50mH, VCLAMP=300V

0.8

μs

Diode Forward Voltage

VF

IF=0.5 A

1.5

V

Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %

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