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전자부품 데이터시트 검색엔진 |
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Q67000-A9230 데이터시트(PDF) 9 Page - Siemens Semiconductor Group |
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Q67000-A9230 데이터시트(HTML) 9 Page - Siemens Semiconductor Group |
9 / 27 page ![]() TDA 4916 GG Semiconductor Group 9 05.96 When the supply to the switch-mode power supply is switched on, the capacitive displacement current from the gate of the SIPMOS transistor is conducted to the smoothing capacitor at V S QSIP by the diode connected to VS QSIP. The voltage at V S QSIP may reach about 2.3 V in the process without the SIPMOS transistor being turned-ON. The diode connected to ground clamps negative voltages at Q SIP to minus 0.7 V. Capacitive currents which occur with voltage dips at the drain terminal of the SIPMOS transistor can then flow away unimpeded. The output is active Low with supply voltages at V S and VS QSIP from about 4 V on. The function of the diode connected to V S QSIP and the resistor are then taken over by the pull-down source. The two ground terminals 0V SQIP and 0V GND can lie at different levels. This permits connections to be made to the SIPMOS transistor in such a way that the drive currents for the gate do not flow to the source via the current-sensing resistor. The maximum permissible level differences between 0V GND and 0V SQIP are given under Functional Range. If greater level differences are anticipated, it is better to join the two terminals. |
유사한 부품 번호 - Q67000-A9230 |
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유사한 설명 - Q67000-A9230 |
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