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STM32F407IGH6 데이터시트(PDF) 105 Page - STMicroelectronics

부품명 STM32F407IGH6
상세설명  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
PDF  185 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F407IGH6 데이터시트(HTML) 105 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.8
-
3.6
V
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 39. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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