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STM32F407IGH6 데이터시트(PDF) 131 Page - STMicroelectronics

부품명 STM32F407IGH6
상세설명  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
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STM32F407IGH6 데이터시트(HTML) 131 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
a
Note:
ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 5.3.16 does not affect the ADC accuracy.
Figure 50. ADC accuracy characteristics
1. See also Table 68.
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
Table 68. ADC accuracy at fADC = 30 MHz(1)
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol
Parameter
Test conditions
Typ
Max(2)
2. Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8(3) to 3.6 V
3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range,
and with the use of an external power supply supervisor (refer to Section : Internal reset OFF).
±2
±5
LSB
EO
Offset error
±1.5
±2.5
EG
Gain error
±1.5
±3
ED
Differential linearity error
±1
±2
EL
Integral linearity error
±1.5
±3
ai14395c
EO
EG
1L SBIDEAL
4095
4094
4093
5
4
3
2
1
0
7
6
1
2
3
456
7
4093 4094 4095 4096
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
V REF+
4096
(or
depending on package)]
V DDA
4096
[1LSB IDEAL=



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