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PIC18F2610E/SOSQTP 데이터시트(PDF) 326 Page - Microchip Technology

부품명 PIC18F2610E/SOSQTP
상세설명  28/40/44-Pin Flash Microcontrollers
PDF  376 Pages
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F2610E/SOSQTP 데이터시트(HTML) 326 Page - Microchip Technology

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PIC18F2X1X/4X1X
DS39636D-page 328
© 2009 Microchip Technology Inc.
TABLE 25-1:
MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications(1)
D110
VPP
Voltage on MCLR/VPP/RE3 pin
VDD + 4
—
12.5
V
(Note 2)
D113
IDDP
Supply Current during
Programming
—10—
mA
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
—
E/W -40
°C to +85°C
D131
VPR
VDD for Read
VMIN
—
5.5
V
VMIN = Minimum operating
voltage
D132
VIE
VDD for Block Erase
4.5
—
5.5
V
Using ICSP™ port
D132A VIW
VDD for Externally Timed Erase
or Write
4.5
—
5.5
V
Using ICSP port
D133
TIE
ICSP Block Erase Cycle Time
—
4
—
ms
VDD > 4.5V
D133A TIW
ICSP Erase or Write Cycle Time
(externally timed)
1—
—
ms
VDD > 4.5V
D134
TRETD Characteristic Retention
40
100
—
Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Required only if Single-Supply programming is disabled.



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