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IRFZ48V 데이터시트(PDF) 4 Page - Kersemi Electronic Co., Ltd.

부품명 IRFZ48V
상세설명  HEXFET Power MOSFET
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제조업체  KERSEMI [Kersemi Electronic Co., Ltd.]
홈페이지  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFZ48V 데이터시트(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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IRFZ48V
4
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
120
0
5
10
15
20
Q , Total Gate Charge (nC)
G
I =
D
72A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
www.kersemi.com


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