Q6040J7TP datasheet(2/7 Pages) LITTELFUSE

부품명	Q6040J7TP

상세설명	Teccor짰 brand Thyristors 40 Amp Alternistor (High Commutation) Triacs

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148

Revised: June 24, 2011 04:57 PM

Teccor® brand Thyristors

Specifications are subject to change without notice.

Please refer to http://www.littelfuse.com for current information.

40 Amp Alternistor (High Commutation) Triacs

Qxx40xx Series

Electrical Characteristics (T

J = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)

Symbol

Test Conditions

Quadrant

Value

Unit

Qxx40xH6

Qxx40K5

Qxx40x7

I

GT

V

D = 12V RL = 60 Ω

I – II – III

MAX.

80

50

100

mA

V

GT

I – II – III

MAX.

1.3

2.0

V

GD

V

D = VDRM RL = 3.3 kΩ TJ = 125°C

I – II – III

MIN.

0.2

V

I

H

I

T = 400mA

MAX.

80

75

100

mA

dv/dt

V

D = VDRM Gate Open TJ = 125°C

400V

MIN.

600

500

700

V/μs

600V

500

475

625

800V

475

400

575

V

D = VDRM Gate Open TJ = 100°C

1000V

- -

500

(dv/dt)c

(di/dt)c = 21.6 A/μs T

J = 125°C

MIN.

30

20

50

V/µs

t

gt

I

G = 2 x IGT PW = 15µs IT = 56.6A(pk)

TYP.

5

µs

Static Characteristics

Symbol

Test Conditions

Value

Unit

V

TM

I

TM = 56.6A tp = 380 µs

T

J = 25°C

MAX.

1.8

V

I

DRM

I

RRM

V

D = VDRM / VRRM

T

J = 25°C

400 –1000V

MAX.

20

μA

T

J = 125°C

400 – 800V

MAX.

5

mA

T

J = 100°C

1000V

MAX.

5

mA

Thermal Resistances

Symbol

Parameter

Value

Unit

R

θ(J-C)

Junction to case (AC)

Qxx40KH6

Qxx40K5

Qxx40K7

0.97

°C/W

Qxx40JH6

Qxx40J7

0.95

Note: xx = voltage

Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

Qxx40x7

Qxx40xH6

T

C = 75°C

40

A

I

TSM

Non repetitive surge peak on-state current

(full cycle, T

J initial = 25°C)

f = 50 Hz

t = 20 ms

335

A

f = 60 Hz

t = 16.7 ms

400

I2t

I2t Value for fusing

t

p = 8.3 ms

664

A2s

di/dt

Critical rate of rise of on-state current

(I

G = 2 x IGT, tr ≤ 100 ns)

f = 120 Hz

T

J = 125°C

150

A/μs

I

GTM

Peak gate trigger current

t

p ≤ 10 μs IGT ≤ IGTM

T

J = 125°C

4

A

P

G(AV)

Average gate power dissipation

T

J = 125°C

0.8

W

T

stg

Storage temperature range

-40 to 150

°C

T

J

Operating junction temperature range

-40 to 125

°C

Note: xx = voltage, x = package

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