Q6016LH651 datasheet(2/9 Pages) LITTELFUSE

부품명	Q6016LH651

상세설명	15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs

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108

Revised: November 1, 2010 05:04 PM

Teccor® brand Thyristors

Specifications are subject to change without notice.

Please refer to http://www.littelfuse.com for current information.

15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs

Qxx15xx & Qxx16xHx Series

Electrical Characteristics (T

J = 25°C, unless otherwise specified) — Standard Triac

Symbol

Test Conditions

Quadrant

Value

Unit

I

GT

V

D = 12V RL = 60 Ω

I – II – III

MAX.

50

mA

V

GT

I – II – III

MAX.

2.0

V

GD

V

D = VDRM RL = 3.3 kΩ TJ = 125°C

I – II – III

MIN.

0.2

V

I

H

I

T = 100mA

MAX.

70

mA

dv/dt

V

D = VDRM Gate Open TJ = 125°C

400V

MIN.

275

V/μs

600V

225

800V

200

V

D = VDRM Gate Open TJ = 100°C

1000V

200

(dv/dt)c

(di/dt)c = 8.1 A/ms T

J = 125°C

MIN.

4

V/μs

t

gt

I

G = 2 x IGT

PW = 15μs I

T = 22.6 A(pk)

TYP.

4

μs

Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

Qxx16LHy

T

C = 80°C

16

A

Qxx16RHy

Qxx16NHy

T

C = 90°C

I

TSM

Non repetitive surge peak on-state current

(full cycle, T

J initial = 25°C)

f = 50 Hz

t = 20 ms

167

A

f = 60 Hz

t = 16.7 ms

200

I2t

I2t Value for fusing

t

p = 8.3 ms

166

A2s

di/dt

Critical rate of rise of on-state current

f = 120 Hz

T

J = 125°C

100

A/μs

I

GTM

Peak gate trigger current

t

p ≤ 10 μs;

I

GT ≤ IGTM

T

J = 125°C

2.0

A

P

G(AV)

Average gate power dissipation

T

J = 125°C

0.5

W

T

stg

Storage temperature range

-40 to 150

ºC

T

J

Operating junction temperature range

-40 to 125

ºC

Note: xx = voltage, y = sensitivity

Absolute Maximum Ratings — Standard Triac

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

Qxx15Ly

T

C = 80°C

15

A

Qxx15Ry

Qxx15Ny

T

C = 90°C

I

TSM

Non repetitive surge peak on-state current

(full cycle, T

J initial = 25°C)

f = 50 Hz

t = 20 ms

167

A

f = 60 Hz

t = 16.7 ms

200

I2t

I2t Value for fusing

t

p = 8.3 ms

166

A2s

di/dt

Critical rate of rise of on-state current

f = 120 Hz

T

J = 125°C

100

A/μs

I

GTM

Peak gate trigger current

t

p ≤ 10 μs

I

GT ≤ IGTM

T

J = 125°C

2.0

A

P

G(AV)

Average gate power dissipation

T

J = 125°C

0.5

W

T

stg

Storage temperature range

-40 to 150

ºC

T

J

Operating junction temperature range

-40 to 125

ºC

Note: xx = voltage, y = sensitivity

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