IRF3205S

IRF3205L

09/06/02

Thermal Resistance

www.irf.com

1

S

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utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing surface

because of its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF3205L) is available for low-profile

applications.

Description

IRF3205S

TO-262

IRF3205L

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

°C/W

Junction-to-Ambient (PCB mounted, steady-state)

*

–––

40

Absolute Maximum Ratings

Parameter

Max.

Units

110

…

80

A

Pulsed Drain Current



390

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



62

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

PD - 94149A