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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7752PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7752PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7752PbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.91A, VGS = 0V trr Reverse Recovery Time ––– 25 ––– ns TJ = 25°C, IF = 0.91A Qrr Reverse RecoveryCharge ––– 23 ––– nC di/dt = 100A/µs Source-Drain Ratings and Characteristics 37 0.91 A When mounted on 1 inch square copper board, t<10 sec Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.030 VGS = 10V, ID = 4.6A ––– 0.036 VGS = 4.5V, ID = 3.9A VGS(th) Gate Threshold Voltage 0.60 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 10V, ID = 4.6A ––– ––– 20 VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -200 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 200 VGS = 12V Qg Total Gate Charge ––– 9.0 ––– ID = 4.6A Qgs Gate-to-Source Charge ––– 2.5 ––– nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 15V tr Rise Time ––– 9.1 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 25 ––– RG = 6.0Ω tf Fall Time ––– 11 ––– VGS = 10V Ciss Input Capacitance ––– 861 ––– VGS = 0V Coss Output Capacitance ––– 210 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 25 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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