전자부품 데이터시트 검색엔진 |
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IRF1010E 데이터시트(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRF1010E 데이터시트(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
4 / 8 page Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 20 40 60 80 100 120 140 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 50A V = 12V DS V = 30V DS V = 48V DS 0.1 1 10 100 1000 0.0 0.6 1.2 1.8 2.4 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° 1 10 100 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd 1 10 100 1000 VDS , Drain-toSource Voltage (V) 1 10 100 1000 Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec IRF1010E 2014-8-12 4 www.kersemi.com |
유사한 부품 번호 - IRF1010E |
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유사한 설명 - IRF1010E |
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