02/14/02

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Junction-to-Ambient (PCB mount)**

–––

40

Thermal Resistance

www.irf.com

1

‡

S

D

G

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010EL) is available for low-

profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

84

‡

59

A

Pulsed Drain Current



330

Power Dissipation

200

W

Linear Derating Factor

1.4

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



50

A

Repetitive Avalanche Energy



17

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

4.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

IRF1010ES

IRF1010EL

IRF1010ES

TO-262

IRF1010EL

°C/W

PD - 91720