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S2N7002DW 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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S2N7002DW 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page ![]() Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET 19-May-2011 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANICAL DATA Case: SOT-363,Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: PACKAGE INFORMATION Package MPQ Leader Size SOT-363 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS 60 V Drain – Gate Voltage RGS=1MΩ VDGR 60 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 115 mA Power Dissipation PD 380 mW Maximum Junction-to-Ambient RθJA 328 °C / W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Note: 1. Pulse Width Limited by Maximum Junction Temperature. SOT-363 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 702 |
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