IRFI3205

PD - 9.1374B

S

D

G

…

TO-220 FULLPAK

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.4

°C/W

Junction-to-Ambient

–––

65

°C/W

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

on-resistance per silicon area.

This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

8/25/97

Description

Parameter

Max.

Units

64

45

A

Pulsed Drain Current

†

390

Power Dissipation

63

W

Linear Derating Factor

0.42

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚†

480

mJ

Avalanche Current

†

59

A

Repetitive Avalanche Energy



6.3

mJ

dv/dt

Peak Diode Recovery dv/dt

Ġ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings