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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFIZ48V 데이터시트(PDF) 2 Page - International Rectifier |
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IRFIZ48V 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFIZ48V 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V trr Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = 72A Qrr Reverse Recovery Charge ––– 155 233 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 39 290 A Starting TJ = 25°C, L = 64µH RG = 25Ω, IAS = 72A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ISD ≤ 72A, di/dt ≤ 151A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12.0 m Ω VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 35 ––– ––– SVDS = 25V, ID = 43A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 72A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.6 ––– VDD = 30V tr Rise Time ––– 200 ––– ID = 72A td(off) Turn-Off Delay Time ––– 157 ––– RG = 9.1Ω tf Fall Time ––– 166 ––– RD = 0.34Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1985 ––– VGS = 0V Coss Output Capacitance ––– 496 ––– VDS = 25V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Eas Single Pulse Avalanche Energy ––– 780
170 mJ I AS = 72A, L = 64mH Crss Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz, See Fig. 5
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Uses IRFZ48V data and test conditions. t = 60s, f = 60Hz |
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