CEN-U95

PNP SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN-U95 is a

PNP silicon Darlington transistor designed for general

purpose amplifier and driver applications where high

gain and high power dissipation is required.

MARKING: FULL PART NUMBER

SYMBOL

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCES

40

V

Emitter-Base Voltage

VEBO

10

V

Continuous Collector Current

IC

2.0

A

Power Dissipation

PD

1.0

W

Power Dissipation (TC=25°C)

PD

10

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

125

°C/W

Thermal Resistance

ΘJC

12.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=30V

100

nA

IEBO

VEB=8.0V

100

nA

BVCBO

IC=100μA

50

V

BVCES

IC=100μA

40

V

BVEBO

IE=10μA

10

V

VCE(SAT)

IC=1.0A, IB=2.0mA

1.5

V

VBE(SAT)

IC=1.0A, IB=2.0mA

2.0

V

VBE(ON)

VCE=5.0V, IC=1.0A

2.0

V

hFE

VCE=5.0V, IC=200mA

25K

150K

hFE

VCE=5.0V, IC=500mA

15K

hFE

VCE=5.0V, IC=1.0A

4K

fT

VCE=5.0V, IC=200mA, f=100MHz

50

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

12

pF

APPLICATIONS:

• Designed for general purpose

amplifiers and drivers

FEATURES:

• High Collector Current (2.0A)

• High DC Current Gain (25K MIN)

TO-202 CASE

R1 (23-January 2012)

www.centr a lsemi.com