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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AUIRFN7107 데이터시트(PDF) 1 Page - List of Unclassifed Manufacturers |
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AUIRFN7107 데이터시트(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 10 page  AUIRFN7107 Base Part Number Package Type Standard Pack Complete Part Number Form Quantity AUIRFN7107 PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN7107TR VDSS 75V RDS(on) max (@VGS = 10V) 8.5m QG (typical) 51nC ID (@TC (Bottom) = 25°C) 75A HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. AUTOMOTIVE GRADE PQFN 5X6 mm G D S Gate Drain Source Applications Injection Heavy Loads DC-DC Converter Parameter Max. Units VDS Drain-to-Source Voltage 75 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 75 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 53 IDM Pulsed Drain Current 300 PD @TA = 25°C Power Dissipation 4.4 W PD @TC(Bottom) = 25°C Power Dissipation 125 Linear Derating Factor 0.029 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 123 mJ IAR Avalanche Current 45 A TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 HEXFET® POWER MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. |
유사한 부품 번호 - AUIRFN7107 |
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유사한 설명 - AUIRFN7107 |
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