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전자부품 데이터시트 검색엔진 |
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AUIRFN7107 데이터시트(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRFN7107 데이터시트(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 10 page  AUIRFN7107 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.9 8.5 m VGS = 10V, ID = 45A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA RG Internal Gate Resistance ––– 0.82 ––– gfs Forward Transconductance 73 ––– ––– S VDS = 25V, ID = 45A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V ––– ––– 250 VDS = 75V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge ––– 51 77 nC ID = 45A Qgs Gate-to-Source Charge ––– 15 ––– VDS = 38V Qgd Gate-to-Drain ("Miller") Charge ––– 14 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 37 ––– ID = 45A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 8.0 ––– ns VDD = 75V tr Rise Time ––– 12 ––– ID = 45A td(off) Turn-Off Delay Time ––– 19 ––– RG = 1.8 tf Fall Time ––– 7.0 ––– VGS = 10V Ciss Input Capacitance ––– 3001 ––– pF VGS = 0V Coss Output Capacitance ––– 371 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 151 ––– ƒ = 1.0 MHz Symbol Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 1.2 °C/W RJC (Top) Junction-to-Case ––– 27 RJA Junction-to-Ambient ––– 34 RJA (<10s) Junction-to-Ambient ––– 22 Thermal Resistance Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 75 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 300 A integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.85 1.3 V TJ = 25°C, IS = 45A, VGS = 0V trr Reverse Recovery Time ––– 28 ––– ns TJ = 25°C, IF = 45A, VDD = 38V Qrr Reverse Recovery Charge ––– 145 ––– nC di/dt = 500A/µs |
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