NXPS20H100CX

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Product data sheet

Rev. 2 — 24 May 2012

4 of 11

NXP Semiconductors

NXPS20H100CX

Dual power Schottky diode

5.

Thermal characteristics

6.

Isolation characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

heatsink

with heatsink compound; per diode;

see Figure 5

--4

K/W

with heatsink compound; both diodes

conducting

--3.2

K/W

thermal resistance from junction to

ambient

in free air

-

55

-

K/W

Fig 5.

Transient thermal impedance from junction to heatsink as a function of pulse width; per diode

003aaj317

1

10

(K/W)

1

10

T

P

t

T

δ =

Table 6.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RMS isolation voltage

50 Hz < f < 60 Hz; sinusoidal waveform ;

RH

≤ 65 %; clean and dust free; from all

terminals to external heatsink

-

-

2500

V

isolation capacitance

from cathode to external heatsink ; f = 1 MHz

-

10

-

pF