NXPS20H110C

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 24 May 2012

4 of 11

NXP Semiconductors

NXPS20H110C

Dual power Schottky diode

5.

Thermal characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

mounting base

with heatsink compound; per diode;

see Figure 5

--1.6

K/W

with heatsink compound; both

diodes conducting

--0.9

K/W

thermal resistance from junction to

ambient

in free air

-

60

-

K/W

Fig 5.

Transient thermal impedance from junction to mounting base as a function of pulse width; per diode

003aaj316

1

10

(K/W)

1

10

T

P

t

T

δ =