NXPS20H110C_15 datasheet(5/11 Pages) PHILIPS

부품명	NXPS20H110C

상세설명	Dual power Schottky diode

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NXPS20H110C

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Product data sheet

Rev. 2 — 24 May 2012

5 of 11

NXP Semiconductors

NXPS20H110C

Dual power Schottky diode

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF =8A; Tj = 25 °C; see Figure 6

--0.71

V

IF =10A; Tj = 25 °C; see Figure 6

--0.77

V

IF =16A; Tj = 25 °C; see Figure 6

--0.81

V

IF =20A; Tj = 25 °C; see Figure 6

--0.88

V

IF =8A; Tj = 125 °C; see Figure 6

-

0.56

0.58

V

IF =10A; Tj =125 °C; see Figure 6

-

0.59

0.64

V

IF =16A; Tj =125 °C; see Figure 6

-

0.65

0.68

V

IF =20A; Tj =125 °C; see Figure 6

-

0.67

0.73

V

IR

reverse current

VR =110 V; Tj =25°C; see Figure 7

-2.5

6

µA

VR =110 V; Tj = 125 °C; see Figure 7

-1.5

6.5

mA

Dynamic characteristics

Cd

diode capacitance

f = 1 MHz; VR =10V; Tj =25°C;

see Figure 8

-

250

-

pF

Fig 6.

Forward current as a function of forward

voltage; per diode

Fig 7.

Reverse leakage current as a function of

reverse voltage; per diode; typical values

VF (V)

01

0.8

0.4

0.6

0.2

003aaj319

8

12

4

16

20

IF

(A)

0

(1)

(2)

(3)

003aaj320

10

10-1

1

103

102

104

IR

(uA)

10-2

VR (V)

0

120

80

40

60

100

20

(1)

(2)

(3)

(4)

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