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NXPS20H110C 데이터시트(PDF) 1 Page - NXP Semiconductors |
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NXPS20H110C 데이터시트(HTML) 1 Page - NXP Semiconductors |
1 / 11 page ![]() 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High junction temperature capability Low leakage current Negligible switching losses Optimised design to give low VF and high Tj(max) 1.3 Applications DC to DC converters Freewheeling diode OR-ing diode Switched mode power supply rectifier 1.4 Quick reference data NXPS20H110C Dual power Schottky diode Rev. 2 — 24 May 2012 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRRM repetitive peak reverse voltage - - 110 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Tj ≤ 163 °C; per diode; see Figure 1; see Figure 2; see Figure 3 --10 A IO(AV) average output current square-wave pulse; δ = 0.5 ; Tmb ≤ 161 °C; both diodes conducting --20 A Tj junction temperature - - 175 °C Static characteristics VF forward voltage IF =10 A; Tj = 25 °C; see Figure 6 --0.77 V IF =10 A; Tj = 125 °C; see Figure 6 - 0.59 0.64 V IR reverse current VR =110 V; Tj =25 °C; see Figure 7 -2.5 6 µA VR =110 V; Tj = 125 °C; see Figure 7 -1.5 6.5 mA |
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