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NXPS20H110C 데이터시트(PDF) 3 Page - NXP Semiconductors |
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NXPS20H110C 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 11 page ![]() NXPS20H110C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 24 May 2012 3 of 11 NXP Semiconductors NXPS20H110C Dual power Schottky diode Fig 1. Forward power dissipation as a function of average forward current; square waveform; per diode; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; per diode; maximum values Fig 3. Average forward current as a function of mounting base temperature; per diode; maximum values Fig 4. Non-repetitive peak forward current as a function of pulse width; square waveform; per diode; maximum values IF(AV) (A) 016 12 48 003aaj311 4 6 2 8 10 Ptot (W) 0 δ = 1 0.5 0.2 0.1 IF(AV) (A) 010 8 46 2 003aaj312 4 2 6 8 Ptot (W) 0 a = 1.57 1.9 2.2 2.8 4.0 Tmb (°C) -50 200 150 50 100 0 003aaj313 4 8 12 IF(AV) (A) 0 163 °C tp (s) 10-5 10-2 10-3 10-4 003aaj315 103 102 104 IFSM (A) 10 tp P t |
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