NXP Semiconductors

NXPS20S100CX

Dual power Schottky diode

NXPS20S100CX

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Product data sheet

30 January 2013

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9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

with heatsink compound; per diode;

Fig. 5

-

-

5

K/W

thermal resistance

from junction to

heatsink

with heatsink compound; both diodes

conducting

-

-

4

K/W

thermal resistance

from junction to

ambient

in free air

-

55

-

K/W

003aak787

1

10

1

10

(K/W)

P

t

T

δ = T

δ = 0.5

δ = 0.3

δ = 0.1

δ = 0.05

δ = 0.02

δ = 0.01

single pulse

Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width; per diode; maximum

values

10. Isolation characteristics

Table 7.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal

waveform ; RH ≤ 65 %; clean and

dust free; from all terminals to external

heatsink

-

-

2500

V

isolation capacitance

from cathode to external heatsink ;

f = 1 MHz

-

10

-

pF