NXPS20S100CX_15 datasheet(5/10 Pages) PHILIPS

부품명	NXPS20S100CX

상세설명	Dual power Schottky diode

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NXP Semiconductors

NXPS20S100CX

Dual power Schottky diode

NXPS20S100CX

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Product data sheet

30 January 2013

5 / 10

11. Characteristics

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IF = 3 A; Tj = 25 °C; Fig. 6

-

0.67

0.72

V

IF = 10 A; Tj = 25 °C; Fig. 6

-

0.8

0.85

V

IF = 3 A; Tj = 125 °C; Fig. 6

-

0.53

0.58

V

VF

forward voltage

IF = 10 A; Tj = 125 °C; Fig. 6

-

0.66

0.71

V

VR = 100 V; Tj = 25 °C; Fig. 7

-

3

µA

IR

reverse current

VR = 100 V; Tj = 125 °C; Fig. 7

-

3

mA

Dynamic characteristics

Cd

diode capacitance

f = 1 MHz; VR = 10 V; Tj = 25 °C; Fig. 8

-

130

-

pF

VF (V)

0

1

0.8

0.4

0.6

0.2

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8

12

4

16

20

IF

(A)

0

(1)

(2)

(3)

Fig. 6. Forward current as a function of forward

voltage; per diode

003aak789

10

10-1

1

103

102

104

IR

(uA)

10-2

VR (V)

0

100

80

40

60

20

(1)

(2)

(3)

(4)

Fig. 7. Reverse leakage current as a function of

reverse voltage; per diode; typical values

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