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STM32F479II 데이터시트(PDF) 102 Page - STMicroelectronics |
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STM32F479II 데이터시트(HTML) 102 Page - STMicroelectronics |
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102 / 208 page ![]() Electrical characteristics STM32F479xx 102/208 DocID028010 Rev 2 Table 30. Typical and maximum current consumption in Standby mode Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V VDD = 3.3 V IDD_STBY Supply current in Standby mode Backup SRAM ON, RTC and LSE oscillator OFF 1.7 2.5 2.9 6(3) 18 35(3) µA Backup SRAM OFF, RTC and LSE oscillator OFF 1.0 1.8 2.20 5(3) 15 30(3) Backup SRAM OFF, RTC ON and LSE oscillator in Power Drive mode 1.7 2.7 3.2 7 20 39 Backup SRAM ON, RTC ON and LSE oscillator in Power Drive mode 2.4 3.4 4.0 8 25 48 Backup SRAM ON, RTC ON and LSE oscillator in High Drive mode 3.2 4.2 4.8 10 29 57 Backup SRAM OFF, RTC ON and LSE oscillator in High Drive mode 2.5 3.5 4.1 8 25 48 1. PDR is off for VDD=1.7 V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by additional 1.2 μA 2. Based on characterization, not tested in production unless otherwise specified. 3. Based on characterization, tested in production. |
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