©2004 Fairchild Semiconductor Corporation

FGL60N100BNTD Rev. A

IGBT

FGL60N100BNTD

NPT-Trench IGBT

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT

technology show outstanding performance in conduction

and switching characteristics as well as enhanced

avalanche ruggedness. These devices are well suited for

Induction Heating ( I-H ) applications

Features

• High Speed Switching

• High Input Impedance

• Built-in Fast Recovery Diode

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

FGL60N100BNTD

Units

Collector-Emitter Voltage

1000

V

Gate-Emitter Voltage

± 25

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

120

A

Diode Continuous Forward Current

A

Maximum Power Dissipation

180

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

°C

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case

--

0.69

°C/W

Thermal Resistance, Junction-to-Case

--

2.08

°C/W

Thermal Resistance, Junction-to-Ambient

--

25

°C/W

Application

Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

G C

E

TO-264

G

C

E

G

C

E