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2N2222A 데이터시트(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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2N2222A 데이터시트(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 6 page ![]() Radiation Hardened NPN Silicon Switching Transistors Rev. V1 2N2221A, L, UA, UB & 2N2222A, L, UA, UB 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear Applications DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C (Continued next page) Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc ICBO1 ICBO2 µAdc nAdc — 10 10 Emitter - Base Cutoff Current VEB = 6.0 Vdc VEB = 4.0 Vdc IEBO1 IEBO2 µAdc nAdc — 10 10 Collector - Emitter Cutoff Current VCE = 50 Vdc ICES nAdc — 50 On Characteristics1: Forward Current Transfer Ratio 2N2221A, L, UA, UB IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10.0 mAdc, VCE = 10 Vdc IC = 150.0 mAdc, VCE = 10 Vdc IC = 500.0 mAdc, VCE = 10 Vdc 2N2222A, L, UA, UB IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10.0 mAdc, VCE = 10 Vdc IC = 150.0 mAdc, VCE = 10 Vdc IC = 500.0 mAdc, VCE = 10 Vdc hFE 30 35 40 40 20 50 75 100 100 30 — 150 — 120 — — 325 11 120 — Collector - Base Cutoff Current IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc VCE(sat) Vdc — 0.3 1.0 Base - Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc VBE(sat) Vdc 0.6 — 1.2 2.0 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%. |
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