ST72361AR4-Auto datasheet(238/279 Pages) STMICROELECTRONICS

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Electrical characteristics

ST72361xx-Auto

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Doc ID 12468 Rev 3

19.8

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

19.8.1

Functional EMS (electromagnetic susceptibility)

Based on a simple running application on the product (toggling two LEDs through I/O ports),

the product is stressed by two electromagnetic events until a failure occurs (indicated by the

LEDs).

●

ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the

device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2

standard.

●

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100pF capacitor, until a functional disturbance occurs. This test

conforms with the IEC 1000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the

table below based on the EMS levels and classes defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations:

The software flowchart must include the management of runaway conditions such as:

●

Corrupted program counter

●

Unexpected reset

●

Critical data corruption (control registers...)

Prequalification trials:

tRET

Data retention

TA =55°C

years

NRW

Write erase cycles

TA = 85°C

100

cycles

TPROG

TERASE

Programming or erasing

temperature range

-40

°C

Data based on characterization results, not tested in production.

VPP must be applied only during the programming or erasing operation and not permanently for reliability

reasons.

Data based on simulation results, not tested in production.

In Write / erase mode the IDD supply current consumption is the same as in Run mode (see Section 20.2.2)

Table 100.

Dual voltage HDFlash memory (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

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