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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F765II 데이터시트(PDF) 145 Page - STMicroelectronics |
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STM32F765II 데이터시트(HTML) 145 Page - STMicroelectronics |
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145 / 255 page  DocID029041 Rev 4 145/255 STM32F765xx STM32F767xx STM32F768Ax STM32F769xx Electrical characteristics 224 5.3.10 Internal clock source characteristics The parameters given in Table 45 and Table 46 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 32. ACCHSI versus temperature 1. Guaranteed by characterization results. Table 45. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. 8 - 4.5 % TA = –10 to 85 °C(3) 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 μs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 μA |
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