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STM32L431 데이터시트(PDF) 155 Page - STMicroelectronics

부품명 STM32L431
상세설명  RTC with HW calendar, alarms and calibration
PDF  200 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32L431 데이터시트(HTML) 155 Page - STMicroelectronics

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STM32L431xx
Electrical characteristics
168
6.3.22
Temperature sensor characteristics
6.3.23
VBAT monitoring characteristics
6.3.24
Timer characteristics
The parameters given in the following tables are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 75. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VTS linearity with temperature
-
±1
±2
°C
Avg_Slope(2)
Average slope
2.3
2.5
2.7
mV/°C
V30
Voltage at 30°C (±5 °C)(3)
0.742
0.76
0.785
V
tSTART
(TS_BUF)(1)
Sensor Buffer Start-up time in continuous mode(4)
-8
15
µs
tSTART(1)
Start-up time when entering in continuous mode(4)
-70
120
µs
tS_temp(1)
ADC sampling time when reading the temperature
5
-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD, when
selected by ADC
-4.7
7
µA
1. Guaranteed by design.
2. Guaranteed by characterization results.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 7:
Temperature sensor calibration values.
4.
Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
Table 76. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-39
-
kΩ
QRatio on VBAT measurement
-
3
-
-
Er(1)
1. Guaranteed by design.
Error on Q
-10
-
10
%
tS_vbat(1)
ADC sampling time when reading the VBAT
12
-
-
µs
Table 77. VBAT charging characteristics
Symbol
Parameter Conditions
Min
Typ
Max
Unit
RBC
Battery
charging
resistor
VBRS = 0
-
5
-
kΩ
VBRS = 1
-
1.5
-



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