MPXM2102AS datasheet(322/670 Pages) MOTOROLA

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MPXV4115V SERIES

3–176

Motorola Sensor Device Data

www.motorola.com/semiconductors

ON–CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING

The performance over temperature is achieved by inte-

grating the shear–stress strain gauge, temperature com-

pensation, calibration and signal conditioning circuitry onto a

single monolithic chip.

Figure 2 illustrates the gauge configuration in the basic chip

carrier (Case 482). A fluorosilicone gel isolates the die surface

and wire bonds from the environment, while allowing the pres-

sure signal to be transmitted to the silicon diaphragm.

The MPXV4115V series sensor operating characteristics

are based on use of dry air as pressure media. Media, other

than dry air, may have adverse effects on sensor performance

and long–term reliability. Internal reliability and qualification

test for dry air, and other media, are available from the factory.

Contact the factory for information regarding media tolerance

in your application.

Figure 3 shows the recommended decoupling circuit for

interfacing the output of the integrated sensor to the A/D in-

put of a microprocessor or microcontroller. Proper decoup-

ling of the power supply is recommended.

Figure 4 shows the sensor output signal relative to differ-

ential pressure input. Typical, minimum and maximum out-

put curves are shown for operation over a temperature range

of 0

°C to 85°C using the decoupling circuit shown in Figure 3.

The output will saturate outside of the specified pressure

range.

Figure 2. Cross–Sectional Diagram (Not to Scale)

1.0

IPS

470 pF

OUTPUT

+5 V

0.01

GND

Vout

Figure 3. Recommended power supply decoupling

and output filtering.

For additional output filtering, please refer to

Application Note AN1646.

FLUOROSILICONE

GEL DIE COAT

WIRE BOND

DIFFERENTIAL SENSING

ELEMENT

THERMOPLASTIC

CASE

STAINLESS

STEEL CAP

LEAD

FRAME

DIE BOND

DIE

Figure 4. Applied Vacuum in kPa (below

atmospheric pressure)

MAX

TRANSFER FUNCTION:

Vout = VS*[(0.007652*P) + 0.92] ± (Pressure error

*Temp Factor*0.007652*VS)

VS = 5.0 V ± 0.25 Vdc

TEMP = 0–85

° C

MIN

–115

–95

–75

–55

–35

–15

0.5

1.5

2.5

3.5

4.5

Vout vs. VACUUM

TRANSFER FUNCTION MPXV4115V

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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