제조업체 | 부품명 | 데이터시트 | 상세설명 |
Excelliance MOS Corp. |
EMD12N10E
|
229Kb/6P
|
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
|
Motorola, Inc |
MTM12N10E
|
177Kb/5P
|
POWER FIELD EFFECT TRANSISTOR
|
MTP12N10E
|
239Kb/6P
|
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
|
New Jersey Semi-Conduct... |
MTP12N10E
|
99Kb/2P
|
Power Field Effect Transistor
|
MTP12N10E
|
99Kb/2P
|
Power Field Effect Transistor
|
NXP Semiconductors |
PHD12N10E
|
79Kb/7P
|
PowerMOS transistor
September 1997 Rev 1.000
|
PHP12N10E
|
72Kb/7P
|
PowerMOS transistor
September 1997 Rev 1.000
|
PFC Device Inc. |
PRM012N10E
|
795Kb/8P
|
100V Single N-Channel MOSFET
|
Search Partnumber :
Start with "12N10E" -
Total : 20 ( 1/1 Page) |
SHENZHEN DOINGTER SEMIC... |
12N10G-S08-R
|
1Mb/6P |
N-Channel MOSFET uses advanced trench technology
|
Unisonic Technologies |
12N10G-TA3-T
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10G-TM3-T
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10G-TN3-R
|
194Kb/5P |
12A, 100V N-CHANNEL POWER MOSFET
|
12N10G-TN3-R
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10G-TN3-T
|
194Kb/5P |
12A, 100V N-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
12N10L
|
1,008Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
12N10L-TA3-T
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10L-TM3-T
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10L-TN3-R
|
239Kb/6P |
N-CHANNEL POWER MOSFET
|
12N10L-TN3-R
|
194Kb/5P |
12A, 100V N-CHANNEL POWER MOSFET
|
12N10L-TN3-T
|
194Kb/5P |
12A, 100V N-CHANNEL POWER MOSFET
|