제조업체 | 부품명 | 데이터시트 | 상세설명 |
STMicroelectronics |
ST2310HI
|
69Kb/6P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
February 2000
|
Search Partnumber :
Start with "ST2310HI" -
Total : 111 ( 1/6 Page) |
STMicroelectronics |
ST2310DHI
|
247Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
ST2310FX
|
233Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
VBsemi Electronics Co.,... |
ST2315S23RG
|
1Mb/9P |
P-Channel 30 V (D-S) MOSFET
|
Stanson Technology |
ST2315SRG
|
218Kb/6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
ST2315SRG
|
1Mb/9P |
P-Channel 30 V (D-S) MOSFET
|
STMicroelectronics |
ST2317DFX
|
64Kb/5P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
Stanson Technology |
ST2317S23RG
|
878Kb/6P |
P Channel Enhancement Mode MOSFET
|
ST2318SRG
|
221Kb/7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
ST2318SRG
|
490Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
ST2319SRG
|
229Kb/8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
ST2319SRG
|
500Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
Stanson Technology |
ST2300
|
302Kb/7P |
N Channel Enhancement Mode MOSFET
|
ST2300S23RG
|
302Kb/7P |
N Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST2300S23RG
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
Stanson Technology |
ST2300SRG
|
484Kb/7P |
N Channel Enhancement Mode MOSFET
|
List of Unclassifed Man... |
ST2300SRG_V2
|
484Kb/7P |
N Channel Enhancement Mode MOSFET
|
Stanson Technology |
ST2301
|
90Kb/6P |
P Channel Enchancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST2301
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
Stanson Technology |
ST2301A
|
221Kb/6P |
P Channel Enhancement Mode MOSFET
|