제조업체 | 부품명 | 데이터시트 | 부품 상세설명 |
 Siemens Semiconductor G... |
Q65210-L100-W4
|
216Kb / 5P |
Differential Magnetoresistive Sensor
|
Q65210-D250-W5
|
220Kb / 5P |
Differential Magnetoresistive Sensor
|
 Infineon Technologies A... |
Q65210-D250-W5
|
163Kb / 5P |
Differential Magnetoresistive Sensor
1999-04-01 |
 Siemens Semiconductor G... |
Q65212-D2504
|
222Kb / 5P |
Differential Magnetoresistive Sensor
|
Q65212-L1004
|
217Kb / 5P |
Differential Magnetoresistive Sensor
|
 OSRAM GmbH |
Q65110-A0185
|
153Kb / 15P |
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
Q65110-A0273
|
153Kb / 15P |
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
Q65110-A0274
|
153Kb / 15P |
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
 Siemens Semiconductor G... |
Q65110-L80F
|
201Kb / 4P |
Double Differential Magneto Resistor
|
 OSRAM GmbH |
Q65110A0136
|
65Kb / 6P |
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
2003-04-10 |
 List of Unclassifed Man... |
Q65110A1058
|
178Kb / 15P |
Vorlaufige Daten Preliminary Data
|
 OSRAM GmbH |
Q65110A1209
|
139Kb / 8P |
Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing
|
Q65110A1209
|
756Kb / 17P |
LIDAR, Pre-Crash, ACC Rain Sensors
|
 List of Unclassifed Man... |
Q65110A1458
|
200Kb / 14P |
Vorlaufige Daten Preliminary Data
|
Q65110A1470
|
200Kb / 14P |
Vorlaufige Daten Preliminary Data
|
 OSRAM GmbH |
Q65110A1569
|
141Kb / 8P |
Engwinklige LED in MIDLED-Gehause
|
Q65110A1570
|
173Kb / 8P |
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
Q65110A1571
|
173Kb / 8P |
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
Q65110A1572
|
141Kb / 8P |
Engwinklige LED in MIDLED-Gehause
|
Q65110A1574
|
388Kb / 14P |
NPN-Silizium-Fototransistor im MIDLED-Geh채use
|