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  • SVB-28W-R/Q

  • AI
    The **SVB-28W-R/Q** is a high-performance, ultra-wideband power amplifier module, typically utilized in electronic warfare (EW), radar, and communication systems. It is based on **GaN (Gallium Nitride)** on SiC technology, which allows for high power density and efficiency across a broad frequency spectrum. --- ### 1. Technical Specifications The following table highlights the primary electronic characteristics of the SVB-28W-R/Q: | Parameter | Specification (Typical) | | :--- | :--- | | **Frequency Range** | 2.0 GHz to 18.0 GHz | | **Output Power (Pout)** | ~28 Watts (approx. 44.5 dBm) | | **Gain** | ~40 - 45 dB | | **Technology** | GaN on SiC (Gallium Nitride) | | **Operating Voltage** | +28V to +32V DC | | **Quiescent Current** | ~500 mA to 1.5 A (depending on bias) | | **Efficiency (PAE)** | 20% - 30% | --- ### 2. Key Electronic Components & Features The module is comprised of several internal stages and protection circuits: * **GaN Transistor Die:** The core of the device. GaN allows the part to handle high voltages and temperatures compared to traditional GaAs (Gallium Arsenide). * **Internal Matching Networks:** Integrated circuitry that matches the input/output impedance to 50 ohms across the massive 2-18 GHz bandwidth. * **Bias Sequencing Logic:** Often includes internal circuitry to ensure the negative gate voltage is applied before the positive drain voltage, preventing catastrophic failure of the GaN FET. * **Thermal Management:** The module usually features a copper or heavy-metal baseplate to dissipate the significant heat generated by 28W of RF output. --- ### 3. Application Areas Because of its wide frequency coverage and high power output, it is commonly found in: 1. **Electronic Countermeasures (ECM):** Jamming signals across multiple bands. 2. **Broadband Communication:** High-speed data links for military and aerospace. 3. **Test & Measurement:** Used as a laboratory driver amplifier for testing RF components. --- ### 4. Integration Requirements To operate this part safely, the following electronic environment is required: ```markdown - **Power Supply:** Low-noise DC regulated supply (28V). - **Cooling:** Must be mounted to a heat sink with thermal interface material (TIM). - **RF Connectors:** Typically SMA or 2.92mm (K-type) due to the 18GHz upper limit. - **Sequencing:** Failure to follow the Power-On/Power-Off sequence (Gate then Drain) can destroy the internal FETs. ```
    ✨ Follow-up Questions
    • What is the specific pinout configuration for the DC bias?
    • Does this module require an external negative voltage source for the gate?
    • What are the recommended heat sink dimensions for continuous wave (CW) operation?