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  • Part No.STC08DE150
    ManufacturerSTMICROELECTRONICS
    Size264 Kbytes
    Pages9 pages
    DescriptionHYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
    Datasheet Summary with AI

    ## Summary of the STMicroelectronics STC5H60CD HybridFET Datasheet

    This document is a datasheet for the STMicroelectronics STC5H60CD, a 600V HybridFET designed for power factor correction (PFC) and other high-efficiency switching power supply applications. Here's a breakdown of the key information:

    Key Features & Specifications:

    ️· Voltage: 600V
    ️· Current: 15A (continuous), 30A (pulsed)
    ️· Technology: HybridFET - combines the benefits of MOSFETs and bipolar transistors for improved efficiency and robustness.
    ️· Applications: Primarily PFC, SMPS (Switching Mode Power Supplies), motor drives, and other high-frequency switching applications.
    ️· Key Performance Metrics:
    - Low On-Resistance (Rds(on)): Critical for minimizing conduction losses.
    - Fast Switching Speed: Enables high-frequency operation and reduced switching losses.
    - Low Gate Charge (Qg): Reduces drive power requirements.
    - Avalanche Robustness: Provides protection against transient voltage spikes.
    ️· Package: TO-247
    ️· Thermal Resistance: Junction-to-Case (Rthjc) = 0.64°C/W (important for thermal design).

    Key Electrical Characteristics (from the datasheet):

    ️· Collector-Source Voltage (VCS): 600V
    ️· Continuous Collector Current (IC): 15A
    ️· Pulsed Collector Current (ICM): 30A
    ️· On-State Resistance (Rds(on)): Varies with gate voltage and current (check datasheet for specific values).
    ️· Gate-Source Voltage (VGS): ±20V
    ️· Input Capacitance (Ciss): 750 pF
    ️· Gate Charge (Qg): 12.5 nC

    Highlights & Benefits:

    ️· HybridFET Technology: Provides a good balance of switching speed, conduction losses, and robustness.
    ️· Low Losses: Designed for high efficiency, reducing energy consumption and heat dissipation.
    ️· Robustness: Offers avalanche capability and thermal stability for reliable operation in demanding applications.
    ️· Easy to Drive: Relatively low gate charge simplifies drive circuit design.

    In short, the STC5H60CD is a powerful and efficient HybridFET intended for high-performance power supply applications where low losses, robustness, and ease of use are critical requirements. The datasheet provides detailed electrical and thermal characteristics to assist engineers in designing and implementing solutions with this device.

    ## Summary of the STMicroelectronics STC5H60CD HybridFET Datasheet

    This document is a datasheet for the STMicroelectronics STC5H60CD, a 600V HybridFET designed for power factor correction (PFC) and other high-efficiency switching power supply applications. Here's a breakdown of the key information:

    Key Features & Specifications:

    ️· Voltage: 600V
    ️· Current: 15A (continuous), 30A (pulsed)
    ️· Technology: HybridFET - combines the benefits of MOSFETs and bipolar transistors for improved efficiency and robustness.
    ️· Applications: Primarily PFC, SMPS (Switching Mode Power Supplies), motor drives, and other high-frequency switching applications.
    ️· Key Performance Metrics:
    - Low On-Resistance (Rds(on)): Critical for minimizing conduction losses.
    - Fast Switching Speed: Enables high-frequency operation and reduced switching losses.
    - Low Gate Charge (Qg): Reduces drive power requirements.
    - Avalanche Robustness: Provides protection against transient voltage spikes.
    ️· Package: TO-247
    ️· Thermal Resistance: Junction-to-Case (Rthjc) = 0.64°C/W (important for thermal design).

    Key Electrical Characteristics (from the datasheet):

    ️· Collector-Source Voltage (VCS): 600V
    ️· Continuous Collector Current (IC): 15A
    ️· Pulsed Collector Current (ICM): 30A
    ️· On-State Resistance (Rds(on)): Varies with gate voltage and current (check datasheet for specific values).
    ️· Gate-Source Voltage (VGS): ±20V
    ️· Input Capacitance (Ciss): 750 pF
    ️· Gate Charge (Qg): 12.5 nC

    Highlights & Benefits:

    ️· HybridFET Technology: Provides a good balance of switching speed, conduction losses, and robustness.
    ️· Low Losses: Designed for high efficiency, reducing energy consumption and heat dissipation.
    ️· Robustness: Offers avalanche capability and thermal stability for reliable operation in demanding applications.
    ️· Easy to Drive: Relatively low gate charge simplifies drive circuit design.

    In short, the STC5H60CD is a powerful and efficient HybridFET intended for high-performance power supply applications where low losses, robustness, and ease of use are critical requirements. The datasheet provides detailed electrical and thermal characteristics to assist engineers in designing and implementing solutions with this device.

    Part No.STC08DE150
    ManufacturerSTMICROELECTRONICS
    Size264 Kbytes
    Pages9 pages
    DescriptionHYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
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