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STC08DE150 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STC08DE150
상세설명  HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STC08DE150 데이터시트(HTML) 2 Page - STMicroelectronics

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Table 3: Absolute Maximum Ratings
Table 4: Thermal Data
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Value
Unit
VCS(SS)
Collector-Source Voltage (VBS = VGS = 0 V)
1500
V
VBS(OS)
Base-Source Voltage (IC= 0, VGS = 0 V)
30
V
VSB(OS)
Source-Base Voltage (IC= 0, VGS = 0 V)
9V
VGS
Gate-Source Voltage
± 20
V
IC
Collector Current
8A
ICM
Collector Peak Current (tp < 5ms)
15
A
IB
Base Current
4A
IBM
Base Peak Current (tp < 1ms)
8A
Ptot
Total Dissipation at TC = 25 oC
155
W
Tstg
Storage Temperature
-65 to 125
°C
TJ
Max. Operating Junction Temperature
125
°C
Symbol
Parameter
Unit
Rthj-case
Thermal Resistance Junction-Case
Max
0.64
oC/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS) Collector-Source Current
(VBS = VGS = 0 V)
VCS(SS) = 1500 V
100
mA
IBS(OS) Base-Source Current
(IC = 0 , VGS = 0 V)
VBS(OS) = 30 V
10
mA
ISB(OS) Source-Base Current
(IC = 0 , VGS = 0 V)
VSB(OS) = 9 V
100
mA
IGS(OS) Gate-Source Leakage
(VBS = 0 V)
VGS = ± 20 V
500
nA
VCS(ON) Collector-Source ON
Voltage
VGS = 10 V IC = 8 A
IB = 1.6 A
VGS = 10 V IC = 5 A
IB = 0.5 A
0.6
0.6
1.4
V
V
hFE
DC Current Gain
IC = 8 A
VCS = 1 V
VGS = 10 V
IC = 5 A
VCS = 1 V
VGS = 10 V
4.5
8
7.5
10
VBS(ON) Base-Source ON Voltage
VGS = 10 V IC = 8 A
IB = 1.6 A
VGS = 10 V IC = 5 A
IB = 0.5 A
1.5
1
2V
V
VGS(th) Gate Threshold Voltage
VBS = VGS
IB = 250 mA1.5
2.2
3
V
Ciss
Input Capacitance
VCS = 25 V f = 1 MHz
VGS = VCB =0
750
pF
QGS(tot) Gate-Source Charge
IC = 8 A
VGS = 10 V
VCS = 25 V
VCB = 0
12.5
nC
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
VGS = 10 V
RG = 47 W
VClamp = 1200 V
tp = 4 ms
IC = 5 A
IB = 0.5 A
526
8.5
ns
ns
VCSW Maximum Collector-Source
Voltage Switched Without
Snubber
RG = 47 W
hFE = 5 A
IC = 8 A
15
V



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