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Hello, Please ask a question about MMBTA92 Datasheet
# Example questions:
➢ What is the maximum collector current (ic) that the mmbta92 transistor can handle?
➢ What is the typical value of hfe (dc current gain) when the collector current (ic) is -10ma and the collector-emitter voltage (vce) is -10v?
➢ How does the thermal resistance junction-to-ambient (rthj-amb) impact the device's operating temperature?
# MMBTA92 Small Signal PNP Transistor
## Description
️· Silicon epitaxial planar PNP high voltage transistor
️· Miniature SOT-23 plastic package for surface mounting
️· Tape and reel packing
️· Complementary NPN type: MMBTA42
## Absolute Maximum Ratings
️· Collector-Base Voltage (VCBO): -300 V
️· Collector-Emitter Voltage (VCEO): -300 V
️· Emitter-Base Voltage (VEBO): -5 V
️· Collector Current (IC): -0.5 A
️· Collector Peak Current (ICM): -0.6 A
️· Total Dissipation (Ptot): 350 mW @ TC = 25°C
️· Storage Temperature (Tstg): -65 to 150 °C
️· Operating Junction Temperature (Tj): 150 °C
## Electrical Characteristics (Tcase = 25°C)
️· Collector Cut-off Current (ICBO): -100 nA @ VCB = -200 V
️· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V @ IC = -100 µA
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V @ IC = -1 mA
️· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V @ IE = -100 µA
️· Collector-Emitter Saturation Voltage (VCE(sat)): -0.5 V @ IC = -20 mA, IB = -2 mA
️· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V @ IC = -20 mA, IB = -2 mA
️· DC Current Gain (hFE):
- 25 @ IC = -1 mA, VCE = -10 V
- 40 @ IC = -10 mA, VCE = -10 V
- 40 @ IC = -30 mA, VCE = -10 V
️· Transition Frequency (fT): 50 MHz @ IC = -10 mA, VCE = -20 V
️· Collector-Emitter Capacitance (CCEO): 50 pF @ VCE = -20 V, f = 1 MHz
## Mechanical Data (SOT-23)
️· Refer to datasheet for detailed dimensions (A, B, C, D, E, F, G, H, L, M, N, O) in mm and mils.
# MMBTA92 Small Signal PNP Transistor
## Description
️· Silicon epitaxial planar PNP high voltage transistor
️· Miniature SOT-23 plastic package for surface mounting
️· Tape and reel packing
️· Complementary NPN type: MMBTA42
## Absolute Maximum Ratings
️· Collector-Base Voltage (VCBO): -300 V
️· Collector-Emitter Voltage (VCEO): -300 V
️· Emitter-Base Voltage (VEBO): -5 V
️· Collector Current (IC): -0.5 A
️· Collector Peak Current (ICM): -0.6 A
️· Total Dissipation (Ptot): 350 mW @ TC = 25°C
️· Storage Temperature (Tstg): -65 to 150 °C
️· Operating Junction Temperature (Tj): 150 °C
## Electrical Characteristics (Tcase = 25°C)
️· Collector Cut-off Current (ICBO): -100 nA @ VCB = -200 V
️· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V @ IC = -100 µA
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V @ IC = -1 mA
️· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V @ IE = -100 µA
️· Collector-Emitter Saturation Voltage (VCE(sat)): -0.5 V @ IC = -20 mA, IB = -2 mA
️· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V @ IC = -20 mA, IB = -2 mA
️· DC Current Gain (hFE):
- 25 @ IC = -1 mA, VCE = -10 V
- 40 @ IC = -10 mA, VCE = -10 V
- 40 @ IC = -30 mA, VCE = -10 V
️· Transition Frequency (fT): 50 MHz @ IC = -10 mA, VCE = -20 V
️· Collector-Emitter Capacitance (CCEO): 50 pF @ VCE = -20 V, f = 1 MHz
## Mechanical Data (SOT-23)
️· Refer to datasheet for detailed dimensions (A, B, C, D, E, F, G, H, L, M, N, O) in mm and mils.
| Part No. | MMBTA92 |
| Manufacturer | STMICROELECTRONICS |
| Size | 56 Kbytes |
| Pages | 4 pages |
| Description | SMALL SIGNAL PNP TRANSISTOR |
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