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MMBTA92 Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector current (ic) that the mmbta92 transistor can handle?
    ➢ What is the typical value of hfe (dc current gain) when the collector current (ic) is -10ma and the collector-emitter voltage (vce) is -10v?
    ➢ How does the thermal resistance junction-to-ambient (rthj-amb) impact the device's operating temperature?

  • Part No.MMBTA92
    ManufacturerSTMICROELECTRONICS
    Size56 Kbytes
    Pages4 pages
    DescriptionSMALL SIGNAL PNP TRANSISTOR
    Datasheet Summary with AI

    # MMBTA92 Small Signal PNP Transistor

    ## Description
    ️· Silicon epitaxial planar PNP high voltage transistor
    ️· Miniature SOT-23 plastic package for surface mounting
    ️· Tape and reel packing
    ️· Complementary NPN type: MMBTA42

    ## Absolute Maximum Ratings
    ️· Collector-Base Voltage (VCBO): -300 V
    ️· Collector-Emitter Voltage (VCEO): -300 V
    ️· Emitter-Base Voltage (VEBO): -5 V
    ️· Collector Current (IC): -0.5 A
    ️· Collector Peak Current (ICM): -0.6 A
    ️· Total Dissipation (Ptot): 350 mW @ TC = 25°C
    ️· Storage Temperature (Tstg): -65 to 150 °C
    ️· Operating Junction Temperature (Tj): 150 °C

    ## Electrical Characteristics (Tcase = 25°C)
    ️· Collector Cut-off Current (ICBO): -100 nA @ VCB = -200 V

    ️· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V @ IC = -100 µA
    ️· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V @ IC = -1 mA
    ️· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V @ IE = -100 µA
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): -0.5 V @ IC = -20 mA, IB = -2 mA
    ️· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V @ IC = -20 mA, IB = -2 mA
    ️· DC Current Gain (hFE):
    - 25 @ IC = -1 mA, VCE = -10 V
    - 40 @ IC = -10 mA, VCE = -10 V
    - 40 @ IC = -30 mA, VCE = -10 V
    ️· Transition Frequency (fT): 50 MHz @ IC = -10 mA, VCE = -20 V
    ️· Collector-Emitter Capacitance (CCEO): 50 pF @ VCE = -20 V, f = 1 MHz

    ## Mechanical Data (SOT-23)
    ️· Refer to datasheet for detailed dimensions (A, B, C, D, E, F, G, H, L, M, N, O) in mm and mils.

    # MMBTA92 Small Signal PNP Transistor

    ## Description
    ️· Silicon epitaxial planar PNP high voltage transistor
    ️· Miniature SOT-23 plastic package for surface mounting
    ️· Tape and reel packing
    ️· Complementary NPN type: MMBTA42

    ## Absolute Maximum Ratings
    ️· Collector-Base Voltage (VCBO): -300 V
    ️· Collector-Emitter Voltage (VCEO): -300 V
    ️· Emitter-Base Voltage (VEBO): -5 V
    ️· Collector Current (IC): -0.5 A
    ️· Collector Peak Current (ICM): -0.6 A
    ️· Total Dissipation (Ptot): 350 mW @ TC = 25°C
    ️· Storage Temperature (Tstg): -65 to 150 °C
    ️· Operating Junction Temperature (Tj): 150 °C

    ## Electrical Characteristics (Tcase = 25°C)
    ️· Collector Cut-off Current (ICBO): -100 nA @ VCB = -200 V
    ️· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V @ IC = -100 µA
    ️· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V @ IC = -1 mA
    ️· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V @ IE = -100 µA
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): -0.5 V @ IC = -20 mA, IB = -2 mA
    ️· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V @ IC = -20 mA, IB = -2 mA
    ️· DC Current Gain (hFE):
    - 25 @ IC = -1 mA, VCE = -10 V
    - 40 @ IC = -10 mA, VCE = -10 V
    - 40 @ IC = -30 mA, VCE = -10 V
    ️· Transition Frequency (fT): 50 MHz @ IC = -10 mA, VCE = -20 V
    ️· Collector-Emitter Capacitance (CCEO): 50 pF @ VCE = -20 V, f = 1 MHz

    ## Mechanical Data (SOT-23)
    ️· Refer to datasheet for detailed dimensions (A, B, C, D, E, F, G, H, L, M, N, O) in mm and mils.

    Part No.MMBTA92
    ManufacturerSTMICROELECTRONICS
    Size56 Kbytes
    Pages4 pages
    DescriptionSMALL SIGNAL PNP TRANSISTOR
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