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  • Part No.2ST2121
    ManufacturerSTMICROELECTRONICS
    Size144 Kbytes
    Pages8 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
    Datasheet Summary with AI

    This document is a preliminary datasheet for the STMicroelectronics 2ST2121 NPN power transistor. Here’s a summary of the key information:

    Key Features & Specs:

    ️· Type: NPN Power Transistor
    ️· Package: TO-3
    ️· Maximum Collector Current (IC): -17A
    ️· Maximum Collector-Emitter Voltage (VCEO): -250V
    ️· Maximum Junction Temperature (TJ): 200°C
    ️· Power Dissipation (PTOT): 250W
    ️· Transition Frequency (fT): 25 MHz
    ️· hFE (DC Current Gain): Ranges from 80 to 160 depending on current levels.

    Document Status:

    ️· Preliminary: The document states the information is subject to change without notice. This means the final product specifications could differ.

    Key Sections:

    ️· Absolute Maximum Ratings: Defines the limits for voltage, current, and temperature to prevent device failure.

    ️· Electrical Characteristics: Provides typical and minimum/maximum values for key parameters like collector current, breakdown voltages, and gain.
    ️· Typical Curves: Includes graphs illustrating the transistor's performance under various conditions.
    ️· Package Dimensions: Details the mechanical dimensions of the TO-3 package.
    ️· Revision History: Tracks changes made to the document.

    Intended Use:

    The 2ST2121 is designed for use in power amplification, switching, and other demanding applications where high current and voltage handling are required.

    Key Features & Specs:

    ️· Type: NPN Power Transistor
    ️· Package: TO-3
    ️· Maximum Collector Current (IC): -17A
    ️· Maximum Collector-Emitter Voltage (VCEO): -250V
    ️· Maximum Junction Temperature (TJ): 200°C
    ️· Power Dissipation (PTOT): 250W
    ️· Transition Frequency (fT): 25 MHz
    ️· hFE (DC Current Gain): Ranges from 80 to 160 depending on current levels.

    Document Status:

    ️· Preliminary: The document states the information is subject to change without notice. This means the final product specifications could differ.

    Key Sections:

    ️· Absolute Maximum Ratings: Defines the limits for voltage, current, and temperature to prevent device failure.
    ️· Electrical Characteristics: Provides typical and minimum/maximum values for key parameters like collector current, breakdown voltages, and gain.
    ️· Typical Curves: Includes graphs illustrating the transistor's performance under various conditions.
    ️· Package Dimensions: Details the mechanical dimensions of the TO-3 package.
    ️· Revision History: Tracks changes made to the document.

    Intended Use:

    The 2ST2121 is designed for use in power amplification, switching, and other demanding applications where high current and voltage handling are required.

    Part No.2ST2121
    ManufacturerSTMICROELECTRONICS
    Size144 Kbytes
    Pages8 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
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