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2ST2121 데이터시트(PDF) 1 Page - STMicroelectronics |
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2ST2121 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. July 2008 Rev 4 1/8 8 2ST2121 High power PNP epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST5949 ■ Fast switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Figure 1. Internal schematic diagram TO-3 1 2 Order code Marking Package Packaging 2ST2121 2ST2121 TO-3 tray www.st.com |
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