# 2SB778 PNP Planar Silicon Transistor

## Overview
· Type: PNP Planar Silicon Transistor
· Applications: Audio Power Amplifier, DC to DC Converter
· Features: High Current Capability, High Power Dissipation

## Absolute Maximum Ratings (TA = 25℃)
· Collector-Base Voltage (VCBO): -120V
· Collector-Emitter Voltage (VCEO): -120V
· Emitter-Base Voltage (VEBO): -6V
· Collector Current (IC): -10A
· Collector Dissipation (PC): 80W
· Junction Temperature (Tj): 150℃
· Storage Temperature (Tstg): -55 ~ 150℃

## Electrical Characteristics (TA = 25℃)
· Collector Base Breakdown Voltage (BVCBO): -120V (IC = -5mA, IE = 0)
· Collector Emitter Breakdown Voltage (BVCEO): -120V (IC = -10mA, RBE = ∞)
· Emitter Base Breakdown Voltage (BVEBO): -6V (IE = -5mA, IC = 0)

· Collector Cutoff Current (ICBO): 55-120mA (VCB = -60V, IE = 0)
· Emitter Cutoff Current (IEBO): -0.1 - -0.1mA (VEB = -4V, IC = 0)
· DC Current Gain (hFE1): 160 (VCE = -5V, IC = -1A)
· DC Current Gain (hFE2): (VCE = -5V, IC = -2A)
· Collector-Emitter Saturation Voltage (VCE(sat)): -1.5V (IC = -3A, IB = -0.3A)